| PART |
Description |
Maker |
| MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM
IC 8MEG FLSH (512KX16) TOP SE
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM
x8 SRAM x8的SRAM
|
Intel, Corp.
|
| KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V8100D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| KM23C8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜 ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS43R16800A1-5TL IS43R16800A1 |
8Meg x 16 128-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
| IS42LS32400A IS42LS16800A-10B IS42LS16800A-10TI IS |
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| WE512K16-140G4CA WE512K16-140G4Q WE512K16-150G4C W |
512Kx16 CMOS EEPROM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| N08M163WL1AD-70I N08M163WL1A N08M163WL1AB N08M163W |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
